Vishay SiS N channel-Channel MOSFET, 55 A, 100 V Enhancement, 8-Pin PowerPAK 1212 SiSD5110DN

N

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PHP154.85

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PHP173.43

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Units
Per Unit
1 - 9PHP154.85
10 - 24PHP100.91
25 - 99PHP53.07
100 - 499PHP51.33
500 +PHP50.46

*price indicative

RS Stock No.:
735-132
Mfr. Part No.:
SiSD5110DN
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

100V

Series

SiS

Package Type

PowerPAK 1212

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0095Ω

Channel Mode

Enhancement

Forward Voltage Vf

100V

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

57W

Typical Gate Charge Qg @ Vgs

19.3nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

4mm

Height

1mm

Width

4mm

Automotive Standard

No

COO (Country of Origin):
DE
The Vishay N-Channel TrenchFET Gen V power MOSFET optimized for low-loss switching in AI power server solutions and high-density power supplies. It achieves a 100V drain-source rating with exceptionally low on-resistance of 9.5 mΩ maximum at 10V gate drive to minimize conduction losses.

55A continuous drain current at TC=25°C

57W maximum power dissipation

Low total gate charge of 29nC maximum

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