Vishay SIS Type N-Channel MOSFET, 8.8 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 SIS112LDN-T1-GE3

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Subtotal (1 reel of 3000 units)*

PHP48,804.00

(exc. VAT)

PHP54,660.00

(inc. VAT)

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3000 +PHP16.268PHP48,804.00

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RS Stock No.:
268-8339
Mfr. Part No.:
SIS112LDN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8.8A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK 1212-8

Series

SIS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.119Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

11.8nC

Maximum Power Dissipation Pd

19.8W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N channel TrenchFET generation 4 power MOSFET is single configuration MOSFET. It is lead free and halogen free and It is used an application as primary side switch, motor drive switch and boost converter.

Tuned for the lowest figure of merit

ROHS compliant

UIS tested 100 percent

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