Vishay SISD Type N-Channel MOSFET, 198 A, 30 V Enhancement, 8-Pin 1212-F SISD5300DN-T1-GE3

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Subtotal (1 pack of 4 units)*

PHP484.512

(exc. VAT)

PHP542.652

(inc. VAT)

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Units
Per Unit
Per Pack*
4 - 56PHP121.128PHP484.51
60 - 96PHP90.945PHP363.78
100 - 236PHP80.753PHP323.01
240 - 996PHP79.188PHP316.75
1000 +PHP77.615PHP310.46

*price indicative

Packaging Options:
RS Stock No.:
279-9979
Mfr. Part No.:
SISD5300DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

198A

Maximum Drain Source Voltage Vds

30V

Package Type

1212-F

Series

SISD

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00087Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

57W

Typical Gate Charge Qg @ Vgs

36.2nC

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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