Vishay SIRS Type P-Channel MOSFET, 227 A, 30 V Enhancement, 8-Pin SO-8 SIRS4301DP-T1-GE3
- RS Stock No.:
- 279-9959
- Mfr. Part No.:
- SIRS4301DP-T1-GE3
- Manufacturer:
- Vishay
Subtotal (1 reel of 3000 units)*
PHP467,160.00
(exc. VAT)
PHP523,230.00
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Last RS stock
- Final 3,000 unit(s), ready to ship from another location
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 + | PHP155.72 | PHP467,160.00 |
*price indicative
- RS Stock No.:
- 279-9959
- Mfr. Part No.:
- SIRS4301DP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 227A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SO-8 | |
| Series | SIRS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0015Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 132W | |
| Typical Gate Charge Qg @ Vgs | 548nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 227A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SO-8 | ||
Series SIRS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0015Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 132W | ||
Typical Gate Charge Qg @ Vgs 548nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 5mm | ||
Automotive Standard No | ||
The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Enhance power dissipation and lower RthJC
Fully lead (Pb)-free device
Related links
- Vishay SIRS Type P-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 SIRS4301DP-T1-GE3
- Vishay SIRS Type P-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SIRS4401DP-T1-GE3
- Vishay SIRS N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8 SIRS5800DP-T1-GE3
- Vishay SIRS N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SIRS5100DP-T1-GE3
- Vishay SIRS N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 SIRS4302DP-T1-GE3
- Vishay Type P-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8 SIR1309DP-T1-GE3
- Vishay Single Si7129DN 1 Type P 35 A 8-Pin PowerPAK 1212-8 SI7129DN-T1-GE3
- Vishay SISH Type P-Channel MOSFET 30 V Enhancement, 8-Pin 1212-8 SISH107DN-T1-GE3