Vishay SIRS Type P-Channel MOSFET, 227 A, 30 V Enhancement, 8-Pin SO-8 SIRS4301DP-T1-GE3
- RS Stock No.:
- 279-9959
- Mfr. Part No.:
- SIRS4301DP-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Subtotal (1 reel of 3000 units)*
PHP327,981.00
(exc. VAT)
PHP367,338.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 3,000 unit(s) shipping from December 29, 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 + | PHP109.327 | PHP327,981.00 |
*price indicative
- RS Stock No.:
- 279-9959
- Mfr. Part No.:
- SIRS4301DP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 227A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SO-8 | |
| Series | SIRS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0015Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 548nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 132W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 227A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SO-8 | ||
Series SIRS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0015Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 548nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 132W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 5mm | ||
Automotive Standard No | ||
The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Enhance power dissipation and lower RthJC
Fully lead (Pb)-free device
Related links
- Vishay SIRS Type P-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 SIRS4301DP-T1-GE3
- Vishay SIRS Type P-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SIRS4401DP-T1-GE3
- Vishay SIRS Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SIRS5100DP-T1-GE3
- Vishay SIRS Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 SIRS4302DP-T1-GE3
- Vishay SIRS Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8 SIRS5800DP-T1-GE3
- Vishay SIRS Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 SIRS4600DP-T1-RE3
- Vishay SIRS Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SIRS4400DP-T1-RE3
- Vishay Type P-Channel MOSFET -30 V Enhancement, 8-Pin SO-8
