Vishay Type P-Channel MOSFET, 20.5 A, -30 V Enhancement, 8-Pin SO-8

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 reel of 3000 units)*

PHP145,824.00

(exc. VAT)

PHP163,323.00

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 6,000 unit(s), ready to ship from another location
Units
Per Unit
Per Reel*
3000 - 6000PHP48.608PHP145,824.00
9000 +PHP45.205PHP135,615.00

*price indicative

RS Stock No.:
252-0243
Mfr. Part No.:
SI4151DY-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

20.5A

Maximum Drain Source Voltage Vds

-30V

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.01mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

5.6W

Typical Gate Charge Qg @ Vgs

58nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the gate terminal is lower than the source voltage.

TrenchFET power MOSFET

100 % Rg and UIS tested

Related links