Vishay Type P-Channel MOSFET, 13.6 A, -30 V Enhancement, 8-Pin SO-8 SI4155DY-T1-GE3

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Subtotal (1 pack of 10 units)*

PHP359.10

(exc. VAT)

PHP402.20

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 40PHP35.91PHP359.10
50 - 90PHP32.32PHP323.20
100 - 240PHP29.088PHP290.88
250 - 990PHP26.179PHP261.79
1000 +PHP23.561PHP235.61

*price indicative

Packaging Options:
RS Stock No.:
252-0246
Mfr. Part No.:
SI4155DY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

13.6A

Maximum Drain Source Voltage Vds

-30V

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.03mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

5.6W

Typical Gate Charge Qg @ Vgs

58nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

TrenchFET power MOSFET

100 % Rg and UIS tested

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