Vishay Type P-Channel MOSFET, 65.7 A, 60 V Enhancement, 8-Pin PowerPAK SO-8 SIR1309DP-T1-GE3

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Subtotal (1 pack of 10 units)*

PHP423.36

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PHP474.16

(inc. VAT)

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Units
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Per Pack*
10 - 40PHP42.336PHP423.36
50 - 90PHP38.103PHP381.03
100 - 240PHP34.293PHP342.93
250 - 990PHP30.864PHP308.64
1000 +PHP27.777PHP277.77

*price indicative

Packaging Options:
RS Stock No.:
252-0271
Mfr. Part No.:
SIR1309DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

65.7A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.01mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

83W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

54nC

Maximum Operating Temperature

175°C

Width

5.15 mm

Length

6.15mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the gate terminal is lower than the source voltage.

TrenchFET Gen IV p-channel power MOSFET

100% Rg tested

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