Vishay TrenchFET Type P-Channel MOSFET, 27 A, 20 V Enhancement, 8-Pin PowerPAK 1212 SISS23DN-T1-GE3

This image is representative of the product range

Currently unavailable
Sorry, we don't know when this will be back in stock.
RS Stock No.:
165-6922
Mfr. Part No.:
SISS23DN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

27A

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

57W

Maximum Gate Source Voltage Vgs

-8V, +8V

Typical Gate Charge Qg @ Vgs

195nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-0.8V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

0.78mm

Length

3.3mm

Width

3.3mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy