Vishay TrenchFET Type P-Channel MOSFET, 27 A, 20 V Enhancement, 8-Pin PowerPAK 1212 SISS23DN-T1-GE3

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Subtotal (1 pack of 20 units)*

PHP799.68

(exc. VAT)

PHP895.64

(inc. VAT)

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Units
Per Unit
Per Pack*
20 - 280PHP39.984PHP799.68
300 - 580PHP38.02PHP760.40
600 - 1480PHP36.054PHP721.08
1500 - 2980PHP33.533PHP670.66
3000 +PHP32.093PHP641.86

*price indicative

Packaging Options:
RS Stock No.:
814-1314
Mfr. Part No.:
SISS23DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

27A

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-0.8V

Maximum Gate Source Voltage Vgs

8 V

Maximum Power Dissipation Pd

57W

Typical Gate Charge Qg @ Vgs

195nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.3mm

Width

3.3 mm

Height

0.78mm

Automotive Standard

No

COO (Country of Origin):
CN

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