Vishay TrenchFET Type P-Channel MOSFET, 23 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISS27DN-T1-GE3

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Subtotal (1 pack of 20 units)*

PHP774.18

(exc. VAT)

PHP867.08

(inc. VAT)

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Last RS stock
  • Final 4,320 unit(s), ready to ship from another location
Units
Per Unit
Per Pack*
20 - 20PHP38.709PHP774.18
40 - 80PHP34.688PHP693.76
100 - 180PHP32.086PHP641.72
200 - 380PHP31.574PHP631.48
400 +PHP31.259PHP625.18

*price indicative

Packaging Options:
RS Stock No.:
814-1323
Mfr. Part No.:
SISS27DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

57W

Typical Gate Charge Qg @ Vgs

92nC

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.3mm

Height

0.78mm

Width

3.3 mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor


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