Infineon HEXFET Type N-Channel MOSFET, 31 A, 55 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 2000 units)*

PHP73,984.00

(exc. VAT)

PHP82,862.00

(inc. VAT)

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Units
Per Unit
Per Tube*
2000 +PHP36.992PHP73,984.00

*price indicative

RS Stock No.:
262-6760
Mfr. Part No.:
IRFIZ44NPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.036Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Standards/Approvals

No

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It has 4.8mm sink to lead creep age distance. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Fully avalanche rated

High voltage isolation 2.5KVRMS

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