Infineon HEXFET Type N-Channel MOSFET, 31 A, 55 V Enhancement, 3-Pin TO-220 IRFIZ44NPBF

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

PHP592.80

(exc. VAT)

PHP663.90

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 1,260 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
10 - 40PHP59.28PHP592.80
50 - 90PHP52.64PHP526.40
100 - 240PHP47.382PHP473.82
250 - 990PHP46.413PHP464.13
1000 +PHP43.093PHP430.93

*price indicative

Packaging Options:
RS Stock No.:
262-6762
Mfr. Part No.:
IRFIZ44NPBF
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.036Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Standards/Approvals

No

Automotive Standard

No

Distrelec Product Id

304-41-675

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It has 4.8mm sink to lead creep age distance. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Fully avalanche rated

High voltage isolation 2.5KVRMS

Related links