Infineon iPB Type N-Channel MOSFET, 195 A, 60 V Enhancement, 3-Pin TO-263 IPB015N06NF2SATMA1

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Subtotal (1 pack of 2 units)*

PHP314.42

(exc. VAT)

PHP352.16

(inc. VAT)

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  • 696 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
2 - 8PHP157.21PHP314.42
10 - 48PHP152.49PHP304.98
50 - 98PHP143.34PHP286.68
100 - 248PHP130.435PHP260.87
250 +PHP114.785PHP229.57

*price indicative

Packaging Options:
RS Stock No.:
262-5852
Mfr. Part No.:
IPB015N06NF2SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

195A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

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