Infineon HEXFET Type N-Channel MOSFET, 202 A, 40 V, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

PHP16,601.20

(exc. VAT)

PHP18,593.35

(inc. VAT)

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In Stock
  • 950 unit(s) ready to ship from another location
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Units
Per Unit
Per Tube*
50 - 50PHP332.024PHP16,601.20
100 - 450PHP322.063PHP16,103.15
500 - 950PHP302.739PHP15,136.95
1000 - 1950PHP275.493PHP13,774.65
2000 +PHP242.434PHP12,121.70

*price indicative

RS Stock No.:
260-5056
Mfr. Part No.:
AUIRF1404
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

202A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

4mΩ

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

36nC

Maximum Power Dissipation Pd

333W

Maximum Operating Temperature

175°C

Length

16.51mm

Height

4.83mm

Width

10.67 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon HEXFET Power MOSFET is specifically design for automotive applications. This power MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Advanced process technology

Ultra low on resistance

Fast switching

Repetitive avalanche allowed up to Tjmax

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