Infineon HEXFET N-Channel MOSFET, 202 A, 40 V, 3-Pin TO-220AB IRF1404PBF

RS Stock No.:: 543-1083
Distrelec Article No.:: 302-84-006
Mfr. Part No.:: IRF1404PBF
Manufacturer:: Infineon

Infineon HEXFET N-Channel MOSFET, 202 A, 40 V, 3-Pin TO-220AB IRF1404PBF

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RS Stock No.:: 543-1083
Distrelec Article No.:: 302-84-006
Mfr. Part No.:: IRF1404PBF
Manufacturer:: Infineon

N-Channel Power MOSFET 40V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 202A Maximum Continuous Drain Current, 333W Maximum Power Dissipation - IRF1404PBF

This power MOSFET is designed for high efficiency and dependability across various applications, making it important for professionals in automation, electronics, and electrical engineering. The advanced processing techniques used ensure minimal on-resistance and a wide operational temperature range, broadening its applicability.

Features & Benefits

• Continuous drain current of 202A supports robust performance
• Low Rds(on) of 4mΩ enhances energy efficiency
• Rapid switching capabilities improve overall performance
• Capable of operating at high temperatures, reaching up to 175°C
• Employs Si MOSFET technology for effective thermal management
• Comes in a TO-220AB package for straightforward mounting

Applications

• Employed in industrial automation systems for efficient power switching
• Suitable for high current motor controls and drives
• Ideal for power supply prioritising efficiency
• Utilised in renewable energy systems for effective power management

What type of voltage can be managed?

The device can support voltage levels up to 40V between the drain and source, offering versatility for various voltage regulation applications.

How does its low on-resistance impact system efficiency?

The low Rds(on) significantly reduces power loss during operation, leading to improved system efficiency by minimising energy waste.

What temperatures can it withstand during operation?

It is designed to function efficiently within a temperature range of -55°C to +175°C, making it appropriate for challenging environments.

Can it handle pulsed drain currents?

Yes, it can accommodate pulsed drain currents up to 808A, which provides flexibility for different application needs.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	202 A
Maximum Drain Source Voltage	40 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	333 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	4.83mm
Typical Gate Charge @ Vgs	131 nC @ 10 V
Number of Elements per Chip	1
Length	10.67mm
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.5V
Height	8.77mm