Infineon HEXFET Type N-Channel MOSFET, 100 A, 40 V, 4-Pin TO-220
- RS Stock No.:
- 257-9269
- Mfr. Part No.:
- IRF1104PBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
PHP2,822.40
(exc. VAT)
PHP3,161.10
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 800 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | PHP56.448 | PHP2,822.40 |
| 100 - 450 | PHP54.755 | PHP2,737.75 |
| 500 - 950 | PHP52.564 | PHP2,628.20 |
| 1000 - 2950 | PHP49.936 | PHP2,496.80 |
| 3000 + | PHP46.94 | PHP2,347.00 |
*price indicative
- RS Stock No.:
- 257-9269
- Mfr. Part No.:
- IRF1104PBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.009Ω | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 93nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 170W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.009Ω | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 93nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 170W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IRF series is the 40V single n channel power mosfet in a TO 220 package.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard surface mount power package
High current rating
Related links
- Infineon HEXFET Type N-Channel MOSFET 40 V, 4-Pin TO-220 IRF1104PBF
- Infineon HEXFET Type N-Channel MOSFET 40 V, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 40 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220
