Infineon HEXFET N-Channel MOSFET, 182 A, 200 V, 3-Pin TO-247AC IRF200P222
- RS Stock No.:
- 258-3959
- Mfr. Part No.:
- IRF200P222
- Manufacturer:
- Infineon
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 258-3959
- Mfr. Part No.:
- IRF200P222
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Series | HEXFET | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 182 A | |
| Maximum Drain Source Voltage (Vds) | 200 V | |
| Pin Count | 3 | |
| Package Type | TO-247AC | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | 1.2 V | |
| Maximum Drain Source Resistance (Rds) | 6.6 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 20 V | |
| Maximum Operating Temperature | 175 °C | |
| Maximum Power Dissipation (Pd) | 556 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface, Through Hole | |
| Standards/Approvals | RoHS | |
| Typical Gate Charge (Qg) @ Vgs | 135 nC | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Series HEXFET | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 182 A | ||
Maximum Drain Source Voltage (Vds) 200 V | ||
Pin Count 3 | ||
Package Type TO-247AC | ||
Automotive Standard No | ||
Forward Voltage (Vf) 1.2 V | ||
Maximum Drain Source Resistance (Rds) 6.6 mΩ | ||
Maximum Gate Source Voltage (Vgs) 20 V | ||
Maximum Operating Temperature 175 °C | ||
Maximum Power Dissipation (Pd) 556 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface, Through Hole | ||
Standards/Approvals RoHS | ||
Typical Gate Charge (Qg) @ Vgs 135 nC | ||
The Infineon MOSFET StrongIRFET is improved gate, avalanche and dynamic dv/dt ruggedness, it is fully characterized capacitance and avalanche SOA.
Enhanced body diode dv/dt and di/dt capability
Lead-free, RoHS compliant
Related links
- Infineon HEXFET N-Channel MOSFET 300 V Enhancement, 3-Pin TO-247AC IRFP4868PBF
- Infineon HEXFET N-Channel Power MOSFET 150 V Enhancement, 3-Pin TO-247AC
- Infineon HEXFET N-Channel Power MOSFET 75 V Enhancement, 3-Pin TO-247AC IRFP4368PBF
- Infineon HEXFET N-Channel Power MOSFET 150 V Enhancement, 3-Pin TO-247AC IRFP4568PBF
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247