Infineon HEXFET N-Channel MOSFET, 70 A, 300 V, 3-Pin TO-247AC IRFP4868PBF
- RS Stock No.:
- 784-8947
- Mfr. Part No.:
- IRFP4868PBF
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 unit)**
PHP342.94
(exc. VAT)
PHP384.09
(inc. VAT)
Temporarily out of stock - back order for despatch 26/10/2025, delivery within 10 working days from desptach date*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP3,000.00 (ex VAT)
Units | Per Unit |
|---|---|
| 1 - 12 | PHP342.94 |
| 13 + | PHP336.09 |
**price indicative
- RS Stock No.:
- 784-8947
- Mfr. Part No.:
- IRFP4868PBF
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 70 A | |
| Maximum Drain Source Voltage | 300 V | |
| Series | HEXFET | |
| Package Type | TO-247AC | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 32 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 517 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Length | 15.87mm | |
| Typical Gate Charge @ Vgs | 180 nC @ 10 V | |
| Width | 5.31mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 20.7mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 70 A | ||
Maximum Drain Source Voltage 300 V | ||
Series HEXFET | ||
Package Type TO-247AC | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 32 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 517 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Length 15.87mm | ||
Typical Gate Charge @ Vgs 180 nC @ 10 V | ||
Width 5.31mm | ||
Minimum Operating Temperature -55 °C | ||
Height 20.7mm | ||
Related links
- Infineon HEXFET N-Channel MOSFET 300 V, 3-Pin TO-247AC IRFP4868PBF
- Infineon HEXFET N-Channel MOSFET 300 V, 3-Pin TO-247AC IRF300P227
- Infineon HEXFET N-Channel MOSFET 40 V, 3-Pin TO-247AC IRLP3034PBF
- Infineon HEXFET N-Channel MOSFET 75 V, 3-Pin TO-247AC IRFP2907PBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-247AC IRFP3306PBF
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin TO-247AC IRFP250MPBF
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin TO-247AC IRFP250NPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-247AC IRFP150NPBF