Infineon IPD Type P-Channel MOSFET, -80 A, -30 V Enhancement, 3-Pin PG-TO-252 IPD80P03P4L07ATMA2
- RS Stock No.:
- 258-3864
- Mfr. Part No.:
- IPD80P03P4L07ATMA2
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP149.69
(exc. VAT)
PHP167.652
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 1,850 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP74.845 | PHP149.69 |
| 10 - 98 | PHP72.60 | PHP145.20 |
| 100 - 248 | PHP68.245 | PHP136.49 |
| 250 - 498 | PHP62.105 | PHP124.21 |
| 500 + | PHP54.655 | PHP109.31 |
*price indicative
- RS Stock No.:
- 258-3864
- Mfr. Part No.:
- IPD80P03P4L07ATMA2
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -80A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | PG-TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 88W | |
| Maximum Gate Source Voltage Vgs | -0.31 V | |
| Forward Voltage Vf | -1.3V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -80A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type PG-TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 88W | ||
Maximum Gate Source Voltage Vgs -0.31 V | ||
Forward Voltage Vf -1.3V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.
No charge pump required for high side drive
Simple interface drive circuit
Highest current capability
Related links
- Infineon IPD Type P-Channel MOSFET -30 V Enhancement, 3-Pin PG-TO-252
- Infineon IPD Type P-Channel MOSFET -30 V Enhancement PG-TO-252
- Infineon IPD Type P-Channel MOSFET -30 V Enhancement PG-TO-252 IPD50P03P4L11ATMA2
- Infineon IPD Type N-Channel MOSFET 120 V Enhancement, 3-Pin PG-TO-252
- Infineon IPD Type N-Channel MOSFET 120 V Enhancement, 3-Pin PG-TO-252 IPD35N12S3L24ATMA1
- Infineon IPD Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252 IPD90P03P404ATMA2
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252