Infineon IPD Type P-Channel MOSFET, -80 A, -30 V Enhancement, 3-Pin PG-TO-252
- RS Stock No.:
- 258-3863
- Mfr. Part No.:
- IPD80P03P4L07ATMA2
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 2500 units)*
PHP127,400.00
(exc. VAT)
PHP142,700.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from March 27, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | PHP50.96 | PHP127,400.00 |
| 5000 - 5000 | PHP45.864 | PHP114,660.00 |
| 7500 + | PHP41.277 | PHP103,192.50 |
*price indicative
- RS Stock No.:
- 258-3863
- Mfr. Part No.:
- IPD80P03P4L07ATMA2
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -80A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | PG-TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -0.31 V | |
| Maximum Power Dissipation Pd | 88W | |
| Forward Voltage Vf | -1.3V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -80A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type PG-TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -0.31 V | ||
Maximum Power Dissipation Pd 88W | ||
Forward Voltage Vf -1.3V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.
No charge pump required for high side drive
Simple interface drive circuit
Highest current capability
Related links
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