Infineon IPD Type P-Channel MOSFET, -50 A, -40 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 258-3843
- Mfr. Part No.:
- IPD50P04P4L11ATMA2
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 2500 units)*
PHP83,965.00
(exc. VAT)
PHP94,040.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from March 30, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | PHP33.586 | PHP83,965.00 |
| 5000 - 5000 | PHP30.228 | PHP75,570.00 |
| 7500 + | PHP27.205 | PHP68,012.50 |
*price indicative
- RS Stock No.:
- 258-3843
- Mfr. Part No.:
- IPD50P04P4L11ATMA2
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -50A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1V | |
| Maximum Power Dissipation Pd | 58W | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -50A | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1V | ||
Maximum Power Dissipation Pd 58W | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.
No charge pump required for high side drive
Simple interface drive circuit
Highest current capability
Related links
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