Infineon IPD Type P-Channel MOSFET, 13.7 A, 100 V Enhancement, 3-Pin TO-252 IPD19DP10NMATMA1
- RS Stock No.:
- 235-4857
- Mfr. Part No.:
- IPD19DP10NMATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 pack of 5 units)*
PHP435.12
(exc. VAT)
PHP487.335
(inc. VAT)
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In Stock
- Plus 2,480 unit(s) shipping from December 29, 2025
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP87.024 | PHP435.12 |
| 10 - 95 | PHP85.326 | PHP426.63 |
| 100 - 245 | PHP83.626 | PHP418.13 |
| 250 - 495 | PHP81.928 | PHP409.64 |
| 500 + | PHP80.228 | PHP401.14 |
*price indicative
- RS Stock No.:
- 235-4857
- Mfr. Part No.:
- IPD19DP10NMATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13.7A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 186mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | -36nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.41mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13.7A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 186mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs -36nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 2.41mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ P-Channel MOSFETs 100V in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy Interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. It is used in Battery management, Industrial automation.
Available in 4 different packages
Wide range
Normal level and logic level availability
Ideal for high and low switching frequency
Easy Interface to MCU
Low design complexity
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