Infineon IPD Type P-Channel MOSFET, -50 A, -30 V Enhancement PG-TO-252 IPD50P03P4L11ATMA2
- RS Stock No.:
- 258-3842
- Mfr. Part No.:
- IPD50P03P4L11ATMA2
- Manufacturer:
- Infineon
This image is representative of the product range
Subtotal (1 pack of 2 units)*
PHP140.94
(exc. VAT)
PHP157.86
(inc. VAT)
FREE delivery for orders over ₱5,000.00
- Plus 2,406 unit(s) shipping from August 31, 2026
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP70.47 | PHP140.94 |
| 10 - 98 | PHP68.355 | PHP136.71 |
| 100 - 248 | PHP64.245 | PHP128.49 |
| 250 - 498 | PHP58.455 | PHP116.91 |
| 500 + | PHP51.45 | PHP102.90 |
*price indicative
- RS Stock No.:
- 258-3842
- Mfr. Part No.:
- IPD50P03P4L11ATMA2
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -50A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Series | IPD | |
| Package Type | PG-TO-252 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 10.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -0.31V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 58W | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Forward Voltage Vf | -1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -50A | ||
Maximum Drain Source Voltage Vds -30V | ||
Series IPD | ||
Package Type PG-TO-252 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 10.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -0.31V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 58W | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Forward Voltage Vf -1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1, RoHS | ||
Automotive Standard AEC-Q101 | ||
Related links
- Infineon IPD Type P-Channel MOSFET -30 V Enhancement PG-TO-252
- Infineon IPD Type P-Channel MOSFET -30 V Enhancement, 3-Pin PG-TO-252
- Infineon IPD Type P-Channel MOSFET -30 V Enhancement, 3-Pin PG-TO-252 IPD80P03P4L07ATMA2
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252 IPD50P04P4L11ATMA2
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 IPD50P04P413ATMA2
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement TO-252
