Infineon IPD Type P-Channel MOSFET, -50 A, -30 V Enhancement PG-TO-252 IPD50P03P4L11ATMA2
- RS Stock No.:
- 258-3842
- Mfr. Part No.:
- IPD50P03P4L11ATMA2
- Manufacturer:
- Infineon
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Subtotal (1 pack of 2 units)*
PHP72.52
(exc. VAT)
PHP81.22
(inc. VAT)
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In Stock
- 2,428 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP36.26 | PHP72.52 |
| 10 - 98 | PHP35.17 | PHP70.34 |
| 100 - 248 | PHP33.055 | PHP66.11 |
| 250 - 498 | PHP30.075 | PHP60.15 |
| 500 + | PHP26.47 | PHP52.94 |
*price indicative
- RS Stock No.:
- 258-3842
- Mfr. Part No.:
- IPD50P03P4L11ATMA2
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -50A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | PG-TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 10.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1V | |
| Maximum Power Dissipation Pd | 58W | |
| Maximum Gate Source Voltage Vgs | -0.31 V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -50A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type PG-TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 10.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1V | ||
Maximum Power Dissipation Pd 58W | ||
Maximum Gate Source Voltage Vgs -0.31 V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.
Simple interface drive circuit
World's lowest RDSon at 40V
Highest current capability
Related links
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- Infineon IPD Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252