Infineon HEXFET Type N-Channel MOSFET, 3.7 A, 200 V, 8-Pin SO-8 IRF7820TRPBF

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Subtotal (1 pack of 5 units)*

PHP458.64

(exc. VAT)

PHP513.675

(inc. VAT)

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  • 3,645 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
5 - 45PHP91.728PHP458.64
50 - 95PHP88.974PHP444.87
100 - 495PHP83.636PHP418.18
500 - 1995PHP76.106PHP380.53
2000 +PHP66.97PHP334.85

*price indicative

Packaging Options:
RS Stock No.:
257-9320
Mfr. Part No.:
IRF7820TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.7A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

SO-8

Pin Count

8

Maximum Drain Source Resistance Rds

78mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2.5W

Typical Gate Charge Qg @ Vgs

29nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

330mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRF series is the 200V single n channel HEXFET power mosfet in a SO 8 package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Normal level is Optimized for 10 V gate drive voltage

Industry standard surface mount package

Capable of being wave soldered


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