Infineon HEXFET Type N-Channel MOSFET, 34 A, 200 V Enhancement, 8-Pin SuperSO IRFH5020TRPBF

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Subtotal (1 pack of 10 units)*

PHP665.28

(exc. VAT)

PHP745.11

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 10PHP66.528PHP665.28
20 - 90PHP64.865PHP648.65
100 - 240PHP63.243PHP632.43
250 - 490PHP61.662PHP616.62
500 +PHP60.121PHP601.21

*price indicative

Packaging Options:
RS Stock No.:
217-2609
Mfr. Part No.:
IRFH5020TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

200V

Package Type

SuperSO

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

55mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

34nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

3.6W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

5mm

Standards/Approvals

RoHS

Width

6 mm

Height

0.9mm

Automotive Standard

No

The Infineon 200V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Normal level : Optimized for 10 V gate drive voltage

Industry standard surface-mount power package

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