Infineon HEXFET Type N-Channel MOSFET, 34 A, 200 V Enhancement, 8-Pin SuperSO
- RS Stock No.:
- 217-2608
- Mfr. Part No.:
- IRFH5020TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 4000 units)*
PHP199,584.00
(exc. VAT)
PHP223,536.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 4,000 unit(s) shipping from December 26, 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 4000 - 4000 | PHP49.896 | PHP199,584.00 |
| 8000 - 8000 | PHP47.977 | PHP191,908.00 |
| 12000 + | PHP47.37 | PHP189,480.00 |
*price indicative
- RS Stock No.:
- 217-2608
- Mfr. Part No.:
- IRFH5020TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | SuperSO | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 55mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3.6W | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Length | 5mm | |
| Width | 6 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type SuperSO | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 55mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3.6W | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Length 5mm | ||
Width 6 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 200V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Normal level : Optimized for 10 V gate drive voltage
Industry standard surface-mount power package
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