Infineon HEXFET Type N-Channel MOSFET, 82 A, 30 V Enhancement, 8-Pin PQFN

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Bulk discount available

Subtotal (1 reel of 4000 units)*

PHP68,840.00

(exc. VAT)

PHP77,120.00

(inc. VAT)

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Units
Per Unit
Per Reel*
4000 - 4000PHP17.21PHP68,840.00
8000 - 8000PHP16.549PHP66,196.00
12000 +PHP16.339PHP65,356.00

*price indicative

RS Stock No.:
217-2612
Mfr. Part No.:
IRFH8325TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

82A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

32nC

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

3.6W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.17mm

Length

6.02mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Logic level : Optimized for 5 V gate drive voltage

Industry standard surface-mount power package

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