Infineon HEXFET Type N-Channel MOSFET & Diode, 100 A, 30 V Enhancement, 8-Pin PQFN
- RS Stock No.:
- 220-7482
- Mfr. Part No.:
- IRFH5300TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 4000 units)*
PHP186,960.00
(exc. VAT)
PHP209,400.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from March 30, 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 4000 - 4000 | PHP46.74 | PHP186,960.00 |
| 8000 - 8000 | PHP45.338 | PHP181,352.00 |
| 12000 + | PHP43.978 | PHP175,912.00 |
*price indicative
- RS Stock No.:
- 220-7482
- Mfr. Part No.:
- IRFH5300TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.6W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.75 mm | |
| Length | 6mm | |
| Height | 0.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.6W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Width 4.75 mm | ||
Length 6mm | ||
Height 0.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRFH5300 is strong power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Logic level : Optimized for 5 V gate drive voltage
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