Infineon HEXFET Type N-Channel MOSFET, 44 A, 150 V Enhancement, 8-Pin PQFN

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Subtotal (1 reel of 4000 units)*

PHP175,824.00

(exc. VAT)

PHP196,924.00

(inc. VAT)

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Units
Per Unit
Per Reel*
4000 +PHP43.956PHP175,824.00

*price indicative

RS Stock No.:
168-5987
Mfr. Part No.:
IRFH5015TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

44A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

31mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

36nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

156W

Maximum Operating Temperature

150°C

Width

5 mm

Length

6mm

Standards/Approvals

No

Height

0.85mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel Power MOSFET 150V to 600V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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