Infineon HEXFET Type N-Channel MOSFET, 3.7 A, 200 V, 8-Pin SO-8

This image is representative of the product range

Subtotal (1 reel of 4000 units)*

PHP161,740.00

(exc. VAT)

PHP181,148.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from March 27, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Reel*
4000 +PHP40.435PHP161,740.00

*price indicative

RS Stock No.:
257-9319
Mfr. Part No.:
IRF7820TRPBF
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.7A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

SO-8

Pin Count

8

Maximum Drain Source Resistance Rds

78mΩ

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2.5W

Typical Gate Charge Qg @ Vgs

29nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Height

330mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRF series is the 200V single n channel HEXFET power mosfet in a SO 8 package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Normal level is Optimized for 10 V gate drive voltage

Industry standard surface mount package

Capable of being wave soldered


Related links