Vishay E Type N-Channel Power MOSFET, 21 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK125N60E-T1-GE3

RS Stock No.:: 239-8637
Mfr. Part No.:: SIHK125N60E-T1-GE3
Manufacturer:: Vishay

Vishay E Type N-Channel Power MOSFET, 21 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK125N60E-T1-GE3

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Subtotal (1 reel of 2000 units)*

PHP371,386.00

(exc. VAT)

PHP415,952.00

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

Plus 2,000 unit(s) shipping from August 10, 2026

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Units	Per Unit	Per Reel*
2000 +	PHP185.693	PHP371,386.00

*price indicative

RS Stock No.:: 239-8637
Mfr. Part No.:: SIHK125N60E-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	21A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK 10 x 12
	Series	E
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.109Ω
	Channel Mode	Depletion
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	54nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	132W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 21A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK 10 x 12
	Series E
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.109Ω
	Channel Mode Depletion
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 54nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 132W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - SIHK125N60E-T1-GE3

Vishay Series E Power MOSFET, 650V Drain Source Voltage, 21A Continuous Drain Current - SIHK125N60E-T1-GE3

This power MOSFET is a high-voltage N-channel switch designed for demanding power-conversion and automotive environments. It operates across an extended ambient range and is supplied in a compact surface-mount PowerPAK 10x12 package suited to dense board layouts. The device supports robust gate drive conditions and is manufactured to meet industry lead-free environmental requirements.

Features and Benefits:

• 650V drain capability enabling high-voltage system designs
• 21A continuous drain current supporting substantial load currents
• Low Rds(on) 0.109Ω reducing conduction losses in power stages
• 132W power dissipation allowing higher thermal headroom
• Gate tolerance up to 30V permitting aggressive drive schemes
• Typical gate charge 54nC for fast switching transitions

Applications

• Suitable for high-voltage DC-DC converters in industrial systems
• Ideal for on-board automotive power distribution modules
• Used with motor-drive stages requiring high-voltage switching
• Can be used for power supplies in telecommunications equipment
• Suitable for half-bridge and synchronous-rectifier implementations

What thermal conditions can it withstand in harsh environments?

It is specified to operate between -55°C and +150°C, enabling use across extreme temperature ranges found in automotive and industrial settings.

How does the package influence mounting and assembly?

The PowerPAK 10x12 surface-mount format offers a low-profile footprint that facilitates automated placement and efficient PCB real-estate usage.

Is this device suitable for automotive qualification workflows?

It complies with the AEC-Q101 automotive standard, making it appropriate for vehicle electronics that require component-level automotive qualification.

What conduction and switching trade-offs should designers expect?

Expect a balance between moderate gate charge and low Rds(on), providing reduced conduction loss while maintaining reasonably fast switching for many power-electronics topologies.