Vishay E Type N-Channel Power MOSFET, 19 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK185N60E-T1-GE3
- RS Stock No.:
- 252-0268
- Mfr. Part No.:
- SIHK185N60E-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Subtotal (1 pack of 2 units)*
PHP671.16
(exc. VAT)
PHP751.70
(inc. VAT)
FREE delivery for orders over ₱3,000.00
- Plus 2,050 unit(s) shipping from August 10, 2026
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 48 | PHP335.58 | PHP671.16 |
| 50 - 98 | PHP327.185 | PHP654.37 |
| 100 - 248 | PHP319.00 | PHP638.00 |
| 250 - 998 | PHP311.03 | PHP622.06 |
| 1000 + | PHP303.265 | PHP606.53 |
*price indicative
- RS Stock No.:
- 252-0268
- Mfr. Part No.:
- SIHK185N60E-T1-GE3
- Manufacturer:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.16Ω | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 114W | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.15mm | |
| Standards/Approvals | RoHS | |
| Width | 5.15mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 10 x 12 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.16Ω | ||
Channel Mode Depletion | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 114W | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Length 6.15mm | ||
Standards/Approvals RoHS | ||
Width 5.15mm | ||
Automotive Standard AEC-Q101 | ||
Vishay Series E Power MOSFET, 650V Drain-Source Voltage, 19A Continuous Drain Current - SIHK185N60E-T1-GE3
Features and Benefits:
• 19A continuous drain current supports substantial load currents
• 0.16Ω Rds(on) reduces conduction losses during operation
• 114W power dissipation permits high-power handling in compact layouts
• 33nC typical gate charge allows predictable switching energy budgeting
• ±20V gate tolerance preserves gate integrity under control transients
Applications
• Ideal for automotive electronic control modules requiring automotive-grade components
• Used for motor-drive front-end switching in industrial equipment
• Can be used for switch-mode power supplies in off-line converters
• Useful in power management circuits demanding surface-mount solutions
What thermal extremes can it withstand during deployment?
How is it packaged for PCB assembly?
Does it meet automotive qualification criteria?
What channel and conduction mode does it use?
Related links
- Vishay Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12
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- Vishay Type N-Channel MOSFET & Diode 650 V Depletion, 8-Pin PowerPAK 10 x 12
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