Vishay E Type N-Channel Power MOSFET, 21 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK125N60E-T1-GE3
- RS Stock No.:
- 239-8638
- Mfr. Part No.:
- SIHK125N60E-T1-GE3
- Manufacturer:
- Vishay
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PHP858.32
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 48 | PHP383.18 | PHP766.36 |
| 50 - 98 | PHP371.69 | PHP743.38 |
| 100 - 248 | PHP349.39 | PHP698.78 |
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| 1000 + | PHP279.79 | PHP559.58 |
*price indicative
- RS Stock No.:
- 239-8638
- Mfr. Part No.:
- SIHK125N60E-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | E | |
| Package Type | PowerPAK 10 x 12 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.109Ω | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Power Dissipation Pd | 132W | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series E | ||
Package Type PowerPAK 10 x 12 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.109Ω | ||
Channel Mode Depletion | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Power Dissipation Pd 132W | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Vishay Series E Power MOSFET, 650V Drain Source Voltage, 21A Continuous Drain Current - SIHK125N60E-T1-GE3
This power MOSFET is a high-voltage N-channel switch designed for demanding power-conversion and automotive environments. It operates across an extended ambient range and is supplied in a compact surface-mount PowerPAK 10x12 package suited to dense board layouts. The device supports robust gate drive conditions and is manufactured to meet industry lead-free environmental requirements.
Features and Benefits:
• 650V drain capability enabling high-voltage system designs
• 21A continuous drain current supporting substantial load currents
• Low Rds(on) 0.109Ω reducing conduction losses in power stages
• 132W power dissipation allowing higher thermal headroom
• Gate tolerance up to 30V permitting aggressive drive schemes
• Typical gate charge 54nC for fast switching transitions
• 21A continuous drain current supporting substantial load currents
• Low Rds(on) 0.109Ω reducing conduction losses in power stages
• 132W power dissipation allowing higher thermal headroom
• Gate tolerance up to 30V permitting aggressive drive schemes
• Typical gate charge 54nC for fast switching transitions
Applications
• Suitable for high-voltage DC-DC converters in industrial systems
• Ideal for on-board automotive power distribution modules
• Used with motor-drive stages requiring high-voltage switching
• Can be used for power supplies in telecommunications equipment
• Suitable for half-bridge and synchronous-rectifier implementations
• Ideal for on-board automotive power distribution modules
• Used with motor-drive stages requiring high-voltage switching
• Can be used for power supplies in telecommunications equipment
• Suitable for half-bridge and synchronous-rectifier implementations
What thermal conditions can it withstand in harsh environments?
It is specified to operate between -55°C and +150°C, enabling use across extreme temperature ranges found in automotive and industrial settings.
How does the package influence mounting and assembly?
The PowerPAK 10x12 surface-mount format offers a low-profile footprint that facilitates automated placement and efficient PCB real-estate usage.
Is this device suitable for automotive qualification workflows?
It complies with the AEC-Q101 automotive standard, making it appropriate for vehicle electronics that require component-level automotive qualification.
What conduction and switching trade-offs should designers expect?
Expect a balance between moderate gate charge and low Rds(on), providing reduced conduction loss while maintaining reasonably fast switching for many power-electronics topologies.
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