Vishay E Type N-Channel Power MOSFET, 42 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK055N60E-T1-GE3

RS Stock No.:: 239-8635
Mfr. Part No.:: SIHK055N60E-T1-GE3
Manufacturer:: Vishay

Vishay E Type N-Channel Power MOSFET, 42 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK055N60E-T1-GE3

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Subtotal (1 reel of 2000 units)*

PHP675,808.00

(exc. VAT)

PHP756,904.00

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

Plus 2,000 unit(s) shipping from August 10, 2026

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Units	Per Unit	Per Reel*
2000 +	PHP337.904	PHP675,808.00

*price indicative

RS Stock No.:: 239-8635
Mfr. Part No.:: SIHK055N60E-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	42A
	Maximum Drain Source Voltage Vds	650V
	Series	E
	Package Type	PowerPAK 10 x 12
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.056Ω
	Channel Mode	Depletion
	Typical Gate Charge Qg @ Vgs	54nC
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	236W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 42A
	Maximum Drain Source Voltage Vds 650V
	Series E
	Package Type PowerPAK 10 x 12
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.056Ω
	Channel Mode Depletion
	Typical Gate Charge Qg @ Vgs 54nC
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 236W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - SIHK055N60E-T1-GE3

Vishay Series E Power MOSFET, 650V Drain Source Voltage, 42A Continuous Drain Current - SIHK055N60E-T1-GE3

This power MOSFET is a high-voltage switching transistor designed for demanding power-conversion and automotive control environments. It operates across an extended ambient range and is offered in a compact surface-mount package suited to high-density assemblies, providing a balance of power handling and thermal capacity for industrial and vehicle electronic systems.

Features and Benefits:

• 650V rating enables high-voltage switching applications
• 42A continuous current supports heavy-load operation
• 0.056Ω Rds(on) reduces conduction losses
• 236W power dissipation allows sustained power throughput
• 54nC typical gate charge minimises switching energy
• 30V gate tolerance ensures robust drive margin

Applications

• Suitable for traction inverter stage power switches
• Ideal for high-voltage DC-DC converter outputs
• Used with motor-drive controllers in automotive systems
• Can be used for industrial power-supply switching
• Appropriate for surface-mounted high-power assemblies

What thermal range can I expect when deploying this device?

It is specified to function from -55°C up to +150°C, enabling operation in extreme ambient and under-bonnet conditions.

How does the package influence mounting and cooling?

The PowerPAK 10x12 surface-mount format provides a low-profile footprint that facilitates PCB thermal conduction and dense board layouts.

Is this device suitable for automotive projects with qualification needs?

It meets AEC-Q101 requirements, making it applicable to many vehicle electronics designs that require automotive-grade components.

What gate-drive constraints should be observed?

The maximum gate-to-source voltage is 30V, so gate-drive circuitry must limit excursions within that range to prevent stress.