Vishay E Type N-Channel Power MOSFET, 48 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK045N60E-T1-GE3

RS Stock No.:: 239-8633
Mfr. Part No.:: SIHK045N60E-T1-GE3
Manufacturer:: Vishay

Vishay E Type N-Channel Power MOSFET, 48 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK045N60E-T1-GE3

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Subtotal (1 reel of 2000 units)*

PHP697,492.00

(exc. VAT)

PHP781,192.00

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

Plus 2,000 unit(s) shipping from August 10, 2026

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Units	Per Unit	Per Reel*
2000 +	PHP348.746	PHP697,492.00

*price indicative

RS Stock No.:: 239-8633
Mfr. Part No.:: SIHK045N60E-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	48A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK 10 x 12
	Series	E
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.043Ω
	Channel Mode	Depletion
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	98nC
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	278W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 48A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK 10 x 12
	Series E
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.043Ω
	Channel Mode Depletion
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 98nC
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 278W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - SIHK045N60E-T1-GE3

Vishay Series E Power MOSFET, 650V Maximum Drain Source Voltage, 48A Maximum Continuous Drain Current - SIHK045N60E-T1-GE3

This power MOSFET is a high-voltage N-channel transistor designed for switching and power conversion in demanding electronic systems. It offers elevated voltage capability and substantial current handling for use in surface-mounted designs where thermal and electrical performance are critical. The device complies with industry lead-free standards and meets automotive qualification for use in vehicle electronics.

Features and Benefits:

• 650V rating for high-voltage switching applications
• 48A continuous drain current for heavy load handling
• 0.043Ω low on-resistance to reduce conduction losses
• 278W power dissipation for improved thermal endurance
• 98nC typical gate charge for predictable switching behaviour
• 30V gate tolerance enabling robust drive margin

Applications

• Suitable for offline power supplies requiring high blocking voltage
• Ideal for automotive power management and motor drive circuits
• Used with DC-DC converters in industrial equipment
• Can be used for inverter stages in renewable-energy systems
• Suitable for compact surface-mount power modules

What thermal extremes can the device tolerate in operation?

It operates across a wide temperature span from -55°C up to +150°C, suitable for harsh ambient conditions.

How is the device packaged for PCB assembly?

It is supplied in a low-profile PowerPAK10x12 surface-mount package optimised for heat dissipation and automated placement.

What gate drive limitations should designers observe?

The gate must be driven within ±30V to avoid gate-source overstress during switching events.

Does the device suit automotive qualification requirements?

It meets AEC‑Q101 automotive standards, making it appropriate for vehicle electronic subsystems.