Vishay SIHK075N60E Type N-Channel MOSFET, 29 A, 600 V, 8-Pin PowerPAK 10 x 12 SIHK075N60E-T1-GE3
- RS Stock No.:
- 239-5381
- Mfr. Part No.:
- SIHK075N60E-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
PHP405.33
(exc. VAT)
PHP453.97
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 2,050 unit(s) shipping from January 05, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 49 | PHP405.33 |
| 50 - 99 | PHP393.17 |
| 100 - 249 | PHP369.58 |
| 250 - 999 | PHP336.32 |
| 1000 + | PHP295.96 |
*price indicative
- RS Stock No.:
- 239-5381
- Mfr. Part No.:
- SIHK075N60E-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | SIHK075N60E | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.08Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 167W | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PowerPAK 10 x 12 | ||
Series SIHK075N60E | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.08Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 167W | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay E series power MOSFET has drain current of 29 A. It is used for server and telecom power supplies, switch mode power supplies (SMPS), power factor correction power supplies (PFC)
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
Related links
- Vishay SIHK075N60E Type N-Channel MOSFET 600 V, 8-Pin PowerPAK 10 x 12 SIHK075N60E-T1-GE3
- Vishay Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12
- Vishay E Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12
- Vishay SIHK Type N-Channel MOSFET 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60E-T1-GE3
- Vishay Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK185N60E-T1-GE3
- Vishay SIHK Type N-Channel MOSFET 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK155N60E-T1-GE3
- Vishay E Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK125N60E-T1-GE3
- Vishay E Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK055N60E-T1-GE3