Infineon CoolMOS Type N-Channel MOSFET, 11.4 A, 600 V Enhancement, 3-Pin TO-263 IPB65R310CFDAATMA1

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Subtotal (1 pack of 5 units)*

PHP767.13

(exc. VAT)

PHP859.185

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 5PHP153.426PHP767.13
10 - 95PHP140.60PHP703.00
100 - 245PHP129.714PHP648.57
250 - 495PHP120.518PHP602.59
500 +PHP117.13PHP585.65

*price indicative

Packaging Options:
RS Stock No.:
222-4660
Mfr. Part No.:
IPB65R310CFDAATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

11.4A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

310mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

AEC Q101 qualified

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