Infineon CoolMOS Type N-Channel MOSFET, 31 A, 650 V Enhancement, 3-Pin TO-263 IPB60R099P7ATMA1

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 5 units)*

PHP1,078.00

(exc. VAT)

PHP1,207.35

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 3,820 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
5 - 5PHP215.60PHP1,078.00
10 - 95PHP197.65PHP988.25
100 - 245PHP182.396PHP911.98
250 - 495PHP169.384PHP846.92
500 +PHP164.672PHP823.36

*price indicative

Packaging Options:
RS Stock No.:
222-4654
Mfr. Part No.:
IPB60R099P7ATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

99mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

Suitable for hard and soft switching (PFC and high performance LLC) Increased MOSFET dv/dt ruggedness to 120V/ns

Increased efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg

Best in class RDS(on) /package

Related links