Infineon CoolMOS Type N-Channel MOSFET, 31.2 A, 650 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 1000 units)*

PHP100,512.00

(exc. VAT)

PHP112,573.00

(inc. VAT)

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Units
Per Unit
Per Reel*
1000 - 1000PHP100.512PHP100,512.00
2000 - 2000PHP97.496PHP97,496.00
3000 +PHP94.571PHP94,571.00

*price indicative

RS Stock No.:
222-4657
Mfr. Part No.:
IPB65R190C7ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

31.2A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-263

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

AEC Q101 qualified

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