Infineon CoolMOS Type N-Channel MOSFET, 9 A, 650 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 222-4670
- Mfr. Part No.:
- IPD60R280CFD7ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 222-4670
- Mfr. Part No.:
- IPD60R280CFD7ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 51W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 51W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Length 6.73mm | ||
Height 2.41mm | ||
Automotive Standard No | ||
The Infineon design of MOSFETs, also known as MOSFET transistors, stands for Metal Oxide Semiconductor Field-Effect Transistors. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Green Product (RoHS compliant)
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications
Related links
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 IPD60R280CFD7ATMA1
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 IPA60R180C7XKSA1
- Infineon CoolMOS Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 IPD60R280P7ATMA1
- Infineon CoolMOS Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-252 IPD60R170CFD7ATMA1
- Infineon CoolMOS CE Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
