Infineon CoolMOS Type N-Channel MOSFET, 9 A, 650 V Enhancement, 3-Pin TO-252 IPD60R280CFD7ATMA1

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

PHP693.00

(exc. VAT)

PHP776.20

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 1,980 unit(s), ready to ship from another location
Units
Per Unit
Per Pack*
10 - 10PHP69.30PHP693.00
20 - 90PHP63.543PHP635.43
100 - 240PHP58.632PHP586.32
250 - 490PHP54.488PHP544.88
500 +PHP52.953PHP529.53

*price indicative

Packaging Options:
RS Stock No.:
222-4671
Mfr. Part No.:
IPD60R280CFD7ATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

51W

Typical Gate Charge Qg @ Vgs

18nC

Width

6.22 mm

Length

6.73mm

Standards/Approvals

No

Height

2.41mm

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)

MSL1 up to 260°C peak reflow AEC Q101 qualified

OptiMOS™ - power MOSFET for automotive applications

Related links