Infineon CoolMOS Type N-Channel MOSFET, 12 A, 650 V Enhancement, 3-Pin TO-252 IPD60R280P7ATMA1

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PHP787.92

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PHP882.47

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Per Unit
Per Pack*
10 - 10PHP78.792PHP787.92
20 - 90PHP72.235PHP722.35
100 - 240PHP66.662PHP666.62
250 - 490PHP61.854PHP618.54
500 +PHP60.215PHP602.15

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Packaging Options:
RS Stock No.:
222-4673
Mfr. Part No.:
IPD60R280P7ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

53W

Typical Gate Charge Qg @ Vgs

18nC

Forward Voltage Vf

0.9V

Width

6.22 mm

Length

6.73mm

Height

2.41mm

Standards/Approvals

No

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)

MSL1 up to 260°C peak reflow AEC Q101 qualified

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