Infineon CoolMOS Type N-Channel MOSFET & Diode, 15 A, 900 V Enhancement, 3-Pin TO-263 IPB90R340C3ATMA2
- RS Stock No.:
- 220-7397
- Mfr. Part No.:
- IPB90R340C3ATMA2
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP664.83
(exc. VAT)
PHP744.61
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 758 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP332.415 | PHP664.83 |
| 10 - 98 | PHP305.005 | PHP610.01 |
| 100 - 248 | PHP281.01 | PHP562.02 |
| 250 - 498 | PHP261.125 | PHP522.25 |
| 500 + | PHP253.585 | PHP507.17 |
*price indicative
- RS Stock No.:
- 220-7397
- Mfr. Part No.:
- IPB90R340C3ATMA2
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Package Type | TO-263 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 340mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 94nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.57mm | |
| Width | 9.45 mm | |
| Length | 10.31mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 900V | ||
Package Type TO-263 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 340mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 94nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 4.57mm | ||
Width 9.45 mm | ||
Length 10.31mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon 900V Cool MOS C3 is Infineon's third series of Cool MOS with market entry in 2001. C3 is the "working horse" of the portfolio.
Low specific on-state resistance (RDS(on)*A)
Very low energy storage in output capacitance (Eoss) @400V
Low gate charge (Qg)
Field proven Cool MOS™ quality
Related links
- Infineon CoolMOS Type N-Channel MOSFET & Diode 900 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-220 IPA95R450P7XKSA1
- STMicroelectronics Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-247
- STMicroelectronics Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-247 STW15NK90Z
- STMicroelectronics SiC MOSFET Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-220
- STMicroelectronics SiC MOSFET Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-220 STF16N90K5
- Infineon CoolMOS Type N-Channel MOSFET & Diode 700 V Enhancement, 3-Pin TO-263