Infineon CoolMOS Type N-Channel MOSFET & Diode, 6.8 A, 650 V Enhancement, 3-Pin TO-251 IPS60R1K0CEAKMA1
- RS Stock No.:
- 220-7439
- Mfr. Part No.:
- IPS60R1K0CEAKMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP791.10
(exc. VAT)
PHP886.04
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 1,500 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP39.555 | PHP791.10 |
| 40 - 80 | PHP36.281 | PHP725.62 |
| 100 - 220 | PHP33.426 | PHP668.52 |
| 240 - 480 | PHP31.074 | PHP621.48 |
| 500 + | PHP30.234 | PHP604.68 |
*price indicative
- RS Stock No.:
- 220-7439
- Mfr. Part No.:
- IPS60R1K0CEAKMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.8A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-251 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 61W | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Height | 6.22mm | |
| Standards/Approvals | No | |
| Width | 2.4 mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.8A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-251 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 61W | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Height 6.22mm | ||
Standards/Approvals No | ||
Width 2.4 mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
The Infineon Cool MOS CE is suitable for hard and soft switching applications and as modern super junction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V Cool MOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.
Narrow margins between typical and max R DS(on)
Reduced energy stored in output capacitance (E oss)
Good body diode ruggedness and reduced reverse recovery charge (Q rr)
Optimized integrated R g
Low conduction losses
Low switching losses
Suitable for hard and soft switching
Easy controllable switching behaviour
Improved efficiency and consequent reduction of power consumption
Less design in effort
Easy to use
Related links
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- Infineon CoolMOS Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-247 IPW60R090CFD7XKSA1
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