Infineon CoolMOS Type N-Channel MOSFET & Diode, 99.6 A, 650 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 220-7460
- Mfr. Part No.:
- IPW65R110CFDAFKSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 tube of 30 units)*
PHP8,527.20
(exc. VAT)
PHP9,550.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 120 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 30 - 60 | PHP284.24 | PHP8,527.20 |
| 90 - 120 | PHP275.713 | PHP8,271.39 |
| 150 + | PHP267.442 | PHP8,023.26 |
*price indicative
- RS Stock No.:
- 220-7460
- Mfr. Part No.:
- IPW65R110CFDAFKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 99.6A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 118nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 277.8W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.21 mm | |
| Standards/Approvals | No | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 99.6A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 118nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 277.8W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Width 5.21 mm | ||
Standards/Approvals No | ||
Height 21.1mm | ||
Length 16.13mm | ||
Automotive Standard No | ||
The Infineon 650V Cool MOS CFDA Super junction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage Cool MOS power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V Cool MOS CFDA series provides also an integrated fast body diode.
First 650V automotive qualified technology with integrated fast body diode on the market
Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt
Low gate charge value Q g
Low Q rr at repetitive commutation on body diode & low Q oss
Reduced turn on and turn of delay times
Increased safety margin due to higher breakdown voltage
Reduced EMI appearance and easy to design in
Better light load efficiency
Lower switching losses
Higher switching frequency and/or higher duty cycle possible
High quality and reliability
Related links
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