Infineon CoolMOS Type N-Channel MOSFET, 31.2 A, 650 V Enhancement, 3-Pin TO-263 IPB65R110CFDAATMA1

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Subtotal (1 pack of 2 units)*

PHP634.60

(exc. VAT)

PHP710.76

(inc. VAT)

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Units
Per Unit
Per Pack*
2 - 8PHP317.30PHP634.60
10 - 98PHP290.935PHP581.87
100 - 248PHP268.41PHP536.82
250 - 498PHP249.24PHP498.48
500 +PHP242.525PHP485.05

*price indicative

Packaging Options:
RS Stock No.:
222-4656
Mfr. Part No.:
IPB65R110CFDAATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

31.2A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-263

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

Ultra fast body diode

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