Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 80 A, 100 V Enhancement, 3-Pin TO-263 IPB065N10N3GATMA1

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Subtotal (1 pack of 5 units)*

PHP920.41

(exc. VAT)

PHP1,030.86

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 5PHP184.082PHP920.41
10 - 95PHP168.744PHP843.72
100 - 245PHP155.898PHP779.49
250 - 495PHP144.482PHP722.41
500 +PHP140.558PHP702.79

*price indicative

Packaging Options:
RS Stock No.:
220-7383
Mfr. Part No.:
IPB065N10N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

OptiMOS 3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.5mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon 100V OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and figure of merit.

Excellent switching performance

World’s lowest R DS(on)

Very low Q g and Q gd

Excellent gate charge x R DS(on) product (FOM)

Environmentally friendly

Increased efficiency

Highest power density

Less paralleling required

Smallest board-space consumption

Easy-to-design products

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