Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 180 A, 80 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 1000 units)*

PHP169,385.00

(exc. VAT)

PHP189,711.00

(inc. VAT)

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Units
Per Unit
Per Reel*
1000 - 1000PHP169.385PHP169,385.00
2000 - 2000PHP164.303PHP164,303.00
3000 +PHP159.374PHP159,374.00

*price indicative

RS Stock No.:
220-7375
Mfr. Part No.:
IPB019N08N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS 3

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.9mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

Optimized technology for DC-DC converters

Excellent gate charge x R DS(ON) product (FOM)

Superior thermal resistance

Dual sided cooling

Low parasitic inductance

Low profile (<0,7mm)

N-channel, normal level

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