Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 180 A, 80 V Enhancement, 3-Pin TO-263 IPB019N08N3GATMA1

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Subtotal (1 pack of 2 units)*

PHP625.48

(exc. VAT)

PHP700.54

(inc. VAT)

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  • 934 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
2 - 8PHP312.74PHP625.48
10 - 98PHP286.36PHP572.72
100 - 248PHP264.375PHP528.75
250 - 498PHP245.695PHP491.39
500 +PHP238.54PHP477.08

*price indicative

Packaging Options:
RS Stock No.:
220-7376
Mfr. Part No.:
IPB019N08N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

80V

Package Type

TO-263

Series

OptiMOS 3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.9mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

Optimized technology for DC-DC converters

Excellent gate charge x R DS(ON) product (FOM)

Superior thermal resistance

Dual sided cooling

Low parasitic inductance

Low profile (<0,7mm)

N-channel, normal level

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