Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 120 A, 80 V Enhancement, 3-Pin TO-263 IPB031N08N5ATMA1

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 5 units)*

PHP968.24

(exc. VAT)

PHP1,084.43

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 1,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
5 - 5PHP193.648PHP968.24
10 - 95PHP187.84PHP939.20
100 - 245PHP182.204PHP911.02
250 - 495PHP176.734PHP883.67
500 +PHP171.434PHP857.17

*price indicative

Packaging Options:
RS Stock No.:
220-7378
Mfr. Part No.:
IPB031N08N5ATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

80V

Package Type

TO-263

Series

OptiMOS 3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.1mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS 5 80V industrial power MOSFET IPB031N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.

Optimized for synchronous rectification

Ideal for high switching frequency

Output capacitance reduction of up to 44%

R DS(on) reduction of up to 44%

Highest system efficiency

Reduced switching and conduction losses

Less paralleling required

Increased power density

Low voltage overshoot

Related links